The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Sep. 08, 2010
Min-ho Kim, Gyunggi-do, KR;
Martin F. Schubert, Troy, NY (US);
Jong Kyu Kim, Watervliet, NY (US);
E. Fred Schubert, Troy, NY (US);
Yongjo Park, Gyunggi-do, KR;
Cheolsoo Sone, Gyunggi-do, KR;
Sukho Yoon, Seoul, KR;
Min-Ho Kim, Gyunggi-do, KR;
Martin F. Schubert, Troy, NY (US);
Jong Kyu Kim, Watervliet, NY (US);
E. Fred Schubert, Troy, NY (US);
Yongjo Park, Gyunggi-do, KR;
Cheolsoo Sone, Gyunggi-do, KR;
Sukho Yoon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Rensselaer Polytechnic Institute, Troy, NY (US);
Abstract
A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.