The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Nov. 27, 2008
Ayumu Sato, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Hisato Yabuta, Machida, JP;
Tomohiro Watanabe, Yokohama, JP;
Ayumu Sato, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Hisato Yabuta, Machida, JP;
Tomohiro Watanabe, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×10atoms/cmor less, and the third insulating layer having a hydrogen content of more than 4×10atoms/cm.