The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2013

Filed:

May. 04, 2010
Applicants:

Patrick J. Sercel, Brentwood, NH (US);

Jeffrey P. Sercel, Hollis, NH (US);

Jongkook Park, Nashua, NH (US);

Inventors:

Patrick J. Sercel, Brentwood, NH (US);

Jeffrey P. Sercel, Hollis, NH (US);

Jongkook Park, Nashua, NH (US);

Assignee:

IPG Microsystems LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/38 (2006.01); B23K 26/06 (2006.01); H01L 21/301 (2006.01);
U.S. Cl.
CPC ...
Abstract

A variable astigmatic focal beam spot is formed using lasers with an anamorphic beam delivery system. The variable astigmatic focal beam spot can be used for cutting applications, for example, to scribe semiconductor wafers such as light emitting diode (LED) wafers. The exemplary anamorphic beam delivery system comprises a series of optical components, which deliberately introduce astigmatism to produce focal points separated into two principal meridians, i.e. vertical and horizontal. The astigmatic focal points result in an asymmetric, yet sharply focused, beam spot that consists of sharpened leading and trailing edges. Adjusting the astigmatic focal points changes the aspect ratio of the compressed focal beam spot, allowing adjustment of energy density at the target without affecting laser output power. Scribing wafers with properly optimized energy and power density increases scribing speeds while minimizing excessive heating and collateral material damage.


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