The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Mar. 10, 2011
Shao-wei Wang, Taichung, TW;
Gin-chen Huang, Taipei County, TW;
Tsuo-wen LU, Kaohsiung County, TW;
Chien-liang Lin, Taoyuan County, TW;
Yu-ren Wang, Tainan, TW;
Shao-Wei Wang, Taichung, TW;
Gin-Chen Huang, Taipei County, TW;
Tsuo-Wen Lu, Kaohsiung County, TW;
Chien-Liang Lin, Taoyuan County, TW;
Yu-Ren Wang, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A gate structure and a method for fabricating the same are described. A substrate is provided, and a gate dielectric layer is formed on the substrate. The formation of the gate dielectric layer includes depositing a silicon nitride layer on the substrate by simultaneously introducing a nitrogen-containing gas and a silicon-containing gas. A gate is formed on the gate dielectric layer, so as to form the gate structure.