The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Aug. 13, 2010
Joo-sung Park, Gyeonggi-do, KR;
Ae-ran Hong, Gyeonggi-do, KR;
Joo-Sung Park, Gyeonggi-do, KR;
Ae-Ran Hong, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
In one embodiment, a semiconductor device has a topmost or highest conductive layer with at least one opening. The semiconductor device includes a semiconductor substrate having a cell array region and an interlayer insulating layer covering the substrate having the cell array region. The topmost conductive layer is disposed on the interlayer insulating layer in the cell array region. The topmost conductive layer has at least one opening. A method of fabricating the semiconductor device is also provided. The openings penetrating the topmost metal layer help hydrogen atoms reach the interfaces of gate insulating layers of cell MOS transistors and/or peripheral MOS transistors during a metal alloy process, thereby improve a performance (production yield and/or refresh characteristics) of a memory device.