The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Feb. 02, 2012
Yakov Roizin, Afula, IL;
Avi Strum, Migdal Haemek, IL;
Yakov Roizin, Afula, IL;
Avi Strum, Migdal Haemek, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
A method for generating three-dimensional (3D) non-volatile memory (NVM) arrays includes forming multiple parallel horizontally-disposed mono-crystalline silicon beams that are spaced apart and arranged in a vertical stack (e.g., such that an elongated horizontal air gap is defined between each adjacent beam in the stack), forming separate charge storage layers on each of the mono-crystalline silicon beams such that each charge storage layer includes a high-quality thermal oxide layer that entirely covers (i.e., is formed on the upper, lower and opposing side surfaces of) each of the mono-crystalline silicon beams, and then forming multiple vertically-disposed poly-crystalline silicon wordline structures next to the stack such that each wordline structure is connected to each of the bitline structures in the stack by way of corresponding portions of the separate charge storage layers. The memory cells are accessed during read/write operations by way of the corresponding wordline and bitline structures.