The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jun. 15, 2010
Yi-chiau Huang, Fremont, CA (US);
Masato Ishii, Sunnyvale, CA (US);
Errol Sanchez, Tracy, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method may include depositing a first layer comprising silicon and germanium (e.g., a seed layer) atop the substrate using a first precursor comprising silicon and chlorine; and depositing a second layer comprising silicon and germanium (e.g., a bulk layer) atop the silicon germanium seed layer using a second precursor comprising silicon and hydrogen. In some embodiments, the first silicon precursor gas may comprise at least one of dichlorosilane (HSiCl), trichlorosilane (HSiCl), or silicon tetrachloride (SiCl). In some embodiments, the second silicon precursor gas may comprise at least one of silane (SiH), or disilane (SiH).