The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jun. 28, 2011
Hideaki Sakurai, Takai-mura, JP;
Toshiaki Watanabe, Sanda, JP;
Nobuyuki Soyama, Kobe, JP;
Guillaume Guegan, Tours, FR;
Hideaki Sakurai, Takai-mura, JP;
Toshiaki Watanabe, Sanda, JP;
Nobuyuki Soyama, Kobe, JP;
Guillaume Guegan, Tours, FR;
Mitusbishi Materials Corporation, Tokyo, JP;
STMicroelectronics(Tours) SAS, Tours, FR;
Abstract
A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300° C., drying at a predetermined temperature within a range from ambient temperature to 500° C., and calcining at a predetermined temperature within a range of 500 to 800° C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.