The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2013

Filed:

Sep. 10, 2012
Applicants:

Do-hyun Kim, Seoul, KR;

Je-hun Lee, Seoul, KR;

Pil-sang Yun, Seoul, KR;

Dong-hoon Lee, Seoul, KR;

Bong-kyun Kim, Incheon, KR;

Inventors:

Do-Hyun Kim, Seoul, KR;

Je-Hun Lee, Seoul, KR;

Pil-Sang Yun, Seoul, KR;

Dong-Hoon Lee, Seoul, KR;

Bong-Kyun Kim, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.


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