The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Sep. 21, 2011
Jong-pil Kim, Hwaseong-si, KR;
Young-goan Jang, Anyang-si, KR;
Dong-won Kim, Seongnam-si, KR;
Hag-ju Cho, Hwaseong-si, KR;
Jong-Pil Kim, Hwaseong-si, KR;
Young-Goan Jang, Anyang-si, KR;
Dong-Won Kim, Seongnam-si, KR;
Hag-Ju Cho, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a gate includes sequentially forming an insulation layer and a conductive layer on substantially an entire surface of a substrate. The substrate has a device isolation layer therein and a top surface of the device isolation layer is higher than a top surface of the substrate. The method includes planarizing a top surface of the conductive layer and forming a gate electrode by patterning the insulation layer and the conductive layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile