The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Feb. 01, 2010
Katsunori Hirota, Yamato, JP;
Akira Ohtani, Ebina, JP;
Kazuaki Tashiro, Ebina, JP;
Yusuke Onuki, Fujisawa, JP;
Takanori Watanabe, Yamato, JP;
Takeshi Ichikawa, Hachioji, JP;
Katsunori Hirota, Yamato, JP;
Akira Ohtani, Ebina, JP;
Kazuaki Tashiro, Ebina, JP;
Yusuke Onuki, Fujisawa, JP;
Takanori Watanabe, Yamato, JP;
Takeshi Ichikawa, Hachioji, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.