The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Sep. 23, 2011
Yi-te Chiu, Hsinchu, TW;
Ming-hung Chang, Hsinchu, TW;
Hao-i Yang, Hsinchu, TW;
Wei Hwang, Hsinchu, TW;
Yi-Te Chiu, Hsinchu, TW;
Ming-Hung Chang, Hsinchu, TW;
Hao-I Yang, Hsinchu, TW;
Wei Hwang, Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
An innovative dual-port subthreshold static random access memory (SRAM) cell for sub-threshold voltage operation is disclosed. During write mode, the dual-port subthreshold SRAM cell would cut off the positive feedback loop of the inverters and utilize the reverse short-channel effect to enhance write capability. The single-ended read/write port structure further reduces power consumption of the lengthy bit line. Therefore, the dual-port subthreshold SRAM cell is a suitable for long operation in a first-in first-out memory system. Although the lower voltage reduces the stability of the memory cell, the dual-port subthreshold SRAM cell of the present invention can still stably operate.