The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2013

Filed:

Nov. 30, 2010
Applicants:

Yoshihiko Yano, Tokyo, JP;

Yasunobu Oikawa, Tokyo, JP;

Kenji Horino, Tokyo, JP;

Hitoshi Saita, Tokyo, JP;

Inventors:

Yoshihiko Yano, Tokyo, JP;

Yasunobu Oikawa, Tokyo, JP;

Kenji Horino, Tokyo, JP;

Hitoshi Saita, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/005 (2006.01); H01G 4/20 (2006.01); H01G 4/33 (2006.01); H01G 4/012 (2006.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); H01G 4/005 (2013.01); H01G 4/012 (2013.01);
Abstract

A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 μmto 7.0 μm, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.


Find Patent Forward Citations

Loading…