The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Mar. 25, 2010
Alexander Ned, Kinnelon, NJ (US);
Vikram Patil, Hoboken, NJ (US);
Joseph Vandeweert, Maywood, NJ (US);
Nora Kurtz, Saddle City, NJ (US);
Anthony D. Kurtz, Saddle River, NJ (US);
Alexander Ned, Kinnelon, NJ (US);
Vikram Patil, Hoboken, NJ (US);
Joseph VanDeWeert, Maywood, NJ (US);
Kulite Semiconductor Products, Inc., Leonia, NJ (US);
Abstract
The RTD device of the present invention is comprised of a semiconductor substrate and a substantially thin conductive metal layer disposed upon the semiconductor substrate, wherein the conductive metal has a substantially linear temperature-resistance relationship. The conductive layer is etched into a convoluted RTD pattern, which consequently increases the overall resistance and minimizes the overall mass of the RTD assembly. A contact glass cover and a conductive metal-glass frit are placed over the RTD assembly to hermetically seal the RTD. The resultant structure can be 'upside-down' mounted onto a header or a flat shim so that the bottom surface of the semiconductor substrate is exposed to the external environment, thus shielding the RTD from external forces. The resultant structure is a low mass, highly conductive, leadless, and hermetically sealed RTD that accurately measures the temperature of liquids and gases and maintains fast response time in high temperatures and harsh environments.