The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2013

Filed:

Feb. 16, 2010
Applicants:

Kyoung-min Kim, Seoul, KR;

Jung-hyun Kim, Daejeon, KR;

Inventors:

Kyoung-Min Kim, Seoul, KR;

Jung-Hyun Kim, Daejeon, KR;

Assignees:

Lumens Co., Ltd., Gyeonggi-Do, KR;

Wavenics, Inc., Daejeon, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a package module structure of a high power device using a metal substrate that can improve reliability by minimizing stress due to a thermal expansion coefficient difference between a metal substrate and a semiconductor device includes: preparing a metal substrate; forming an oxide layer by selectively anodizing the metal substrate; forming a mounting groove for mounting a semiconductor device by etching a portion of the oxide layer; installing a shock-absorbing substrate that is made of a material having a thermal expansion coefficient in a range similar to a material of a semiconductor device to expose the entirety or a portion of a bottom portion of the mounting groove; mounting the semiconductor device in the shock-absorbing substrate exposed to the mounting groove; and electrically connecting an electrode terminal of the semiconductor device and an electrode line formed in an upper surface of the oxide layer.


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