The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Jul. 08, 2011
Sun-ha Hwang, Yongin-si, KR;
Young-soo Park, Yongin-si, KR;
Sam-jong Choi, Suwon-si, KR;
Joon-young Choi, Suwon-si, KR;
Tae-hyoung Koo, Suwon-si, KR;
Sun-Ha Hwang, Yongin-si, KR;
Young-Soo Park, Yongin-si, KR;
Sam-Jong Choi, Suwon-si, KR;
Joon-Young Choi, Suwon-si, KR;
Tae-Hyoung Koo, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.