The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Oct. 15, 2010
Hiroto Yamagiwa, Hyogo, JP;
Shingo Hashizume, Kyoto, JP;
Ayanori Ikoshi, Kyoto, JP;
Manabu Yanagihara, Osaka, JP;
Yasuhiro Uemoto, Toyama, JP;
Hiroto Yamagiwa, Hyogo, JP;
Shingo Hashizume, Kyoto, JP;
Ayanori Ikoshi, Kyoto, JP;
Manabu Yanagihara, Osaka, JP;
Yasuhiro Uemoto, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.