The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
May. 28, 2008
Wensheng Wang, Kawasaki, JP;
Ko Nakamura, Kawasaki, JP;
Wensheng Wang, Kawasaki, JP;
Ko Nakamura, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element formed in a semiconductor substrate; lamination of an interlayer insulating film and a lower insulating shielding film having a hydrogen/moisture shielding function, the lamination being formed covering the semiconductor element; a conductive adhesion enhancing film formed above the lower insulating shielding film; and a ferro-electric capacitor including a lower electrode formed above the conductive adhesion enhancing film, a ferro-electric film formed on the lower electrode and being disposed within the lower electrode as viewed in plan, and an upper electrode formed on the ferro-electric film and being disposed within the ferro-electric film as viewed in plan, wherein the conductive adhesion enhancing film has a function of improving adhesion of the lower electrode and reducing leak current of the ferro-electric capacitor.