The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Sep. 02, 2011
Dong-beom Lee, Yongin-si, KR;
Deok-young Choi, Yongin-si, KR;
Dae-hyun Noh, Yongin-si, KR;
Yong-sung Park, Yongin-si, KR;
Won-kyu Lee, Yongin-si, KR;
Dong-Beom Lee, Yongin-si, KR;
Deok-Young Choi, Yongin-si, KR;
Dae-Hyun Noh, Yongin-si, KR;
Yong-Sung Park, Yongin-si, KR;
Won-Kyu Lee, Yongin-si, KR;
Samsung Display Co., Ltd., Giheung-Gu, Yongin, Gyeonggi-Do, KR;
Abstract
In a multilayered photodiode and a method of manufacturing the same, the multilayered photodiode comprises: a transparent substrate; a gate insulating film formed on the transparent substrate; a first metal layer formed on the gate insulating film; a semiconductor layer formed on the first metal layer so as to be in contact with the first metal layer; and a second metal layer formed on the semiconductor layer so as to be in contact with the semiconductor layer. The photodiode is vertically multilayered, and has a metal-insulator-metal (MIM) structure in which a P-N region is replaced by a metal, and in which a light-receiving region does not block incident light.