The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Oct. 18, 2010
Applicants:
Vladislav Vashchenko, Palo Alto, CA (US);
Antonio Gallerano, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Inventors:
Vladislav Vashchenko, Palo Alto, CA (US);
Antonio Gallerano, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a DIAC-like device that includes an n+ and a p+ region connected to the high voltage node, and an n+ and a p+ region connected to the low voltage node, at least two MOS devices are formed between the n+ and p+ region connected to the high voltage node, and the n+ and p+ region connected to the low voltage node.