The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Feb. 26, 2009
Applicants:
Erhard Kohn, Ulm, DE;
Michele Dipalo, Neu-Ulm, DE;
Farid Medjdoub, Goutroux, BE;
Inventors:
Assignee:
Universitat Ulm, , DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a semiconductor device, in particular to a chemical field effect transistor (ChemFET), a high-electron mobility transistor (HEMT) and an ion-sensitive field effect transistor (ISFET), as well as a method for manufacturing the same. The semiconductor device comprises a structure, the structure comprises a substrate, a first layer comprising GaN and a second layer comprising InAlN, wherein the first and the second layer are arranged parallely to each other on the substrate, and wherein the structure comprises a third layer comprising diamond.