The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Nov. 02, 2011
Toshiaki Arai, Kanagawa, JP;
Narihiro Morosawa, Kanagawa, JP;
Kazuhiko Tokunaga, Kanagawa, JP;
Hiroshi Sagawa, Kanagawa, JP;
Kiwamu Miura, Kanagawa, JP;
Toshiaki Arai, Kanagawa, JP;
Narihiro Morosawa, Kanagawa, JP;
Kazuhiko Tokunaga, Kanagawa, JP;
Hiroshi Sagawa, Kanagawa, JP;
Kiwamu Miura, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.