The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Jan. 17, 2007
Applicants:
Vladislav Vashchenko, Palo Alto, CA (US);
Vladimir Kuznetsov, Santa Clara, CA (US);
Peter J. Hopper, San Jose, CA (US);
Inventors:
Vladislav Vashchenko, Palo Alto, CA (US);
Vladimir Kuznetsov, Santa Clara, CA (US);
Peter J. Hopper, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 23/60 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high voltage ESD protection diode wherein the p-n junction is defined by a p-well and an n-well and includes a RESURF region, the diode including a field oxide layer formed on top of the p-well and n-well, wherein the parameters of the diode are adjustable by controlling one or more of the junction width, the length of the RESURF region, or the length of the field oxide layer.