Methods of forming conductive layer patterns using gas phase cleaning process and methods of manufacturing semiconductor devices

Abstract

Methods of forming conductive patterns include forming a conductive layer including a metal element on a substrate. The conductive layer is partially etched to generate a residue including an oxide of the metal element and to form a plurality of separately formed conductive layer patterns. A cleaning gas is inflowed onto the substrate including the conductive layer pattern. The metal compound is evaporated to remove the metal element contained in the residue and to form an insulating interface layer on the conductive layer pattern and a surface portion of the substrate through a reaction of a portion of the cleaning gas and oxygen. The residue may be removed from the conductive layer pattern to suppress generation of a leakage current.