The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Aug. 08, 2011
Yuji Masui, Kanagawa, JP;
Takahiro Arakida, Kanagawa, JP;
Yoshinori Yamauchi, Tokyo, JP;
Kayoko Kikuchi, Kanagawa, JP;
Rintaro Koda, Tokyo, JP;
Norihiko Yamaguchi, Kanagawa, JP;
Yuji Masui, Kanagawa, JP;
Takahiro Arakida, Kanagawa, JP;
Yoshinori Yamauchi, Tokyo, JP;
Kayoko Kikuchi, Kanagawa, JP;
Rintaro Koda, Tokyo, JP;
Norihiko Yamaguchi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.