The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Nov. 21, 2011
Chunwon Byun, Daejeon, KR;
Byeonghoon Kim, Gyeonggi-do, KR;
Sung Min Yoon, Daejeon, KR;
Shinhyuk Yang, Gyeonggi-do, KR;
Min Ki Ryu, Seoul, KR;
Chi-sun Hwang, Daejeon, KR;
Sang-hee Park, Daejeon, KR;
Kyoung Ik Cho, Daejeon, KR;
Chunwon Byun, Daejeon, KR;
ByeongHoon Kim, Gyeonggi-do, KR;
Sung Min Yoon, Daejeon, KR;
Shinhyuk Yang, Gyeonggi-do, KR;
Min Ki Ryu, Seoul, KR;
Chi-Sun Hwang, Daejeon, KR;
Sang-Hee Park, Daejeon, KR;
Kyoung Ik Cho, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.