The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Jan. 19, 2012
Igor Vurgaftman, Odenton, MD (US);
Jerry R. Meyer, Catonsville, MD (US);
Chadwick Lawrence Canedy, Washington, DC (US);
William W. Bewley, Falls Church, VA (US);
James R. Lindle, Bowie, MD (US);
Chul-soo Kim, Springfield, VA (US);
Mijin Kim, Springfield, VA (US);
Igor Vurgaftman, Odenton, MD (US);
Jerry R. Meyer, Catonsville, MD (US);
Chadwick Lawrence Canedy, Washington, DC (US);
William W. Bewley, Falls Church, VA (US);
James R. Lindle, Bowie, MD (US);
Chul-soo Kim, Springfield, VA (US);
Mijin Kim, Springfield, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.