The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Aug. 24, 2011
Tomoyuki Sasaki, Tokyo, JP;
Tohru Oikawa, Tokyo, JP;
Kiyoshi Noguchi, Tokyo, JP;
Toshio Suzuki, Akita, JP;
Tomoyuki Sasaki, Tokyo, JP;
Tohru Oikawa, Tokyo, JP;
Kiyoshi Noguchi, Tokyo, JP;
Toshio Suzuki, Akita, JP;
TDK Corporation, Tokyo, JP;
Akita Prefecture, Akita, JP;
Abstract
The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer, a first magnesium oxide filmA disposed on a first part of the silicon channel layer, and a first ferromagnetic layerA disposed on the first magnesium oxide filmA. The first magnesium oxide filmA partly includes a first lattice-matched part P lattice-matched with both of the silicon channel layerand the first ferromagnetic layerA.