The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Feb. 25, 2011
Jae-woo Park, Seongnam-si, KR;
Je-hun Lee, Seoul, KR;
Seong-jin Lee, Seoul, KR;
Yeon-hong Kim, Yongin-si, KR;
Jae-Woo Park, Seongnam-si, KR;
Je-Hun Lee, Seoul, KR;
Seong-Jin Lee, Seoul, KR;
Yeon-Hong Kim, Yongin-si, KR;
Samsung Display Co., Ltd., , KR;
Abstract
A thin film transistor includes a gate electrode formed on a substrate, a semiconductor pattern overlapped with the gate electrode, a source electrode overlapped with a first end of the semiconductor pattern and a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode. The semiconductor pattern includes an amorphous multi-elements compound including a II B element and a VI A element or including a III A element and a V A element and having an electron mobility no less than 1.0 cm/Vs and an amorphous phase, wherein the VI A element excludes oxygen. Thus, a driving characteristic of the thin film transistor may be improved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile