The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8492185 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 23, 2013

Filed:

Jul. 13, 2012
Applicants:

Mark P. D'evelyn, Goleta, CA (US);

James Speck, Goleta, CA (US);

William Houck, Fremont, CA (US);

Mathew Schmidt, Fremont, CA (US);

Arpan Chakraborty, Goleta, CA (US);

Inventors:

Mark P. D'Evelyn, Goleta, CA (US);

James Speck, Goleta, CA (US);

William Houck, Fremont, CA (US);

Mathew Schmidt, Fremont, CA (US);

Arpan Chakraborty, Goleta, CA (US);

Assignee:

Soraa, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.


Find Patent Forward Citations

Quick Actions:

D'Evelyn, Mark. (2013). Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices (U.S. Patent No. 8492185). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8492185

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…