The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Jul. 13, 2012
Applicants:
Mark P. D'evelyn, Goleta, CA (US);
James Speck, Goleta, CA (US);
William Houck, Fremont, CA (US);
Mathew Schmidt, Fremont, CA (US);
Arpan Chakraborty, Goleta, CA (US);
Inventors:
Mark P. D'Evelyn, Goleta, CA (US);
James Speck, Goleta, CA (US);
William Houck, Fremont, CA (US);
Mathew Schmidt, Fremont, CA (US);
Arpan Chakraborty, Goleta, CA (US);
Assignee:
Soraa, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.