The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
May. 01, 2010
Olav Hellwig, San Jose, CA (US);
Dieter K. Weller, San Jose, CA (US);
Olav Hellwig, San Jose, CA (US);
Dieter K. Weller, San Jose, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
A silicon/gold (Si/Au) bilayer seed structure is located in a film stack between an amorphous or crystalline lower layer and an upper layer with a well-defined crystalline structure. The seed structure includes a Si layer on the generally flat surface of the lower layer and a Au layer on the Si layer. The Si/Au interface initiates the growth of the Au layer with a face-centered-cubic (fcc) crystalline structure with the (111) plane oriented in-plane. The upper layer grown on the Au layer has a fcc or hexagonal-close-packed (hcp) crystalline structure. If the upper layer is a fcc material its [111] direction is oriented substantially perpendicular to the (111) plane of the Au layer and if the upper layer is a hcp material, its c-axis is oriented substantially perpendicular to the (111) plane of the Au layer.