The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

Aug. 11, 2011
Applicants:

Omid Oliaei, Tempe, AZ (US);

Stephen J. Rector, Tempe, AZ (US);

Cristiano Benevento, Chandler, AZ (US);

Inventors:

Omid Oliaei, Tempe, AZ (US);

Stephen J. Rector, Tempe, AZ (US);

Cristiano Benevento, Chandler, AZ (US);

Assignee:

Fujitsu Semiconductor Limited, Yokohama-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

In accordance with some embodiments of the present disclosure, a method may include generating a first current equal to a bandgap voltage divided by a resistance selected to approximately match a process resistance integral to a receiver. The method may further include generating a second current equal to temperature-dependent current multiplied by a predetermined scaling factor. The method may also include subtracting the second current from the first current to generate a bias current. The method may additionally include providing the bias current to the receiver.


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