The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
May. 16, 2011
Seiji Sumi, Yokohama, JP;
Shigenori Hayakawa, Atsugi, JP;
Kaoru Okamoto, Yokohama, JP;
Shunya Yamauchi, Yokohama, JP;
Yasushi Sakuma, Tokyo, JP;
Seiji Sumi, Yokohama, JP;
Shigenori Hayakawa, Atsugi, JP;
Kaoru Okamoto, Yokohama, JP;
Shunya Yamauchi, Yokohama, JP;
Yasushi Sakuma, Tokyo, JP;
Oclaro Japan, Inc., Kanagawa, JP;
Abstract
Provided is a semiconductor optical device, which has a buried heterostructure structure and is formed in a structure capable of reducing a parasitic capacitance to further improve characteristics thereof, and also provided are an optical transmitter module, an optical transceiver module, and an optical transmission equipment. The semiconductor optical device includes a modulator portion for modulating light input along an emitting direction and radiating the modulated light, the modulator portion including: a mesa-stripe structure, which includes an active layer and extends in the emitting direction; and a buried layer provided adjacent to each side of the mesa-stripe structure, in which a distance between a lower surface of the buried layer and a lower surface of the active layer is 20% or more of a distance between the lower surface and an upper surface of the buried layer.