The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

Jan. 23, 2009
Applicants:

Kazuki Fujita, Hamamatsu, JP;

Harumichi Mori, Hamamatsu, JP;

Ryuji Kyushima, Hamamatsu, JP;

Masahiko Honda, Hamamatsu, JP;

Inventors:

Kazuki Fujita, Hamamatsu, JP;

Harumichi Mori, Hamamatsu, JP;

Ryuji Kyushima, Hamamatsu, JP;

Masahiko Honda, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A61B 6/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a solid-state imaging device and the like having a structure for capturing a high-resolution image even when any of the reading-out wiring and row selecting wiring is disconnected. A pixel portion Pof the photodetecting section () includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SWconnected to the photodiode PD. The pixel portion Poccupies a substantially square region, and most of the region is a region of the photodiode PD. A field-effect transistor serving as the reading-out switch SWis formed in one corner of the region. A channel stopper CS is continuously formed in a region sandwiched by pixel portions. In a region surrounded by any 2×2 pixel portions adjacent to one another, a dummy photodiode PDsurrounded by the channel stopper CS is formed.


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