The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Sep. 30, 2010
Takahiro Arakida, Kanagawa, JP;
Shiro Uchida, Tokyo, JP;
Masaki Shiozaki, Kanagawa, JP;
Osamu Maeda, Kanagawa, JP;
Takahiro Arakida, Kanagawa, JP;
Shiro Uchida, Tokyo, JP;
Masaki Shiozaki, Kanagawa, JP;
Osamu Maeda, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.