The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Dec. 10, 2009
Suguru Imai, Tokyo, JP;
Keishi Takaki, Tokyo, JP;
Norihiro Iwai, Tokyo, JP;
Kinuka Tanabe, Tokyo, JP;
Hitoshi Shimizu, Tokyo, JP;
Hirotatsu Ishii, Tokyo, JP;
Suguru Imai, Tokyo, JP;
Keishi Takaki, Tokyo, JP;
Norihiro Iwai, Tokyo, JP;
Kinuka Tanabe, Tokyo, JP;
Hitoshi Shimizu, Tokyo, JP;
Hirotatsu Ishii, Tokyo, JP;
Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.