The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Mar. 30, 2007
Masanobu Hirose, Kyoto, JP;
Masanobu Hirose, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In a semiconductor storage device, either two memory cell gates TG or a memory cell gate TG and a bit-line connecting gate SW are formed in every set of n-type doped regions OD at the intersections with word lines WL or bit-line selecting lines KS. A portion near the center of the set of n-type doped regions OD serves as a source/drain region shared by two gates, whereas portions near both ends thereof serve as source/drain regions for respective gates. Each of the source/drain regions is connected to a storage electrode SN of a memory cell capacitor via a storage contact CA or is connected to a sub bit line or a main bit line via a sub-bit-line contact CH and/or a via of a metal interconnection. A pattern formed of four memory cell gates TG and four bit-line connecting gates SW is repeated.