The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8487408 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 16, 2013

Filed:

Jul. 28, 2011
Applicant:

Shinichi Komatsu, Kanagawa, JP;

Inventor:

Shinichi Komatsu, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
Abstract

A bipolar transistor of the invention has a second base regionwhich is formed in the surface layer of a deep well, placed between a first base region and a sinker, connected to the first base region, has an impurity concentration larger than that of the first base region, and has a depth shallower than that of the first base region; and a buried layer formed in a semiconductor layer, which has the top surface thereof brought into contact with the deep well and the sinker, and has an impurity concentration larger than that of the deep well.


Find Patent Forward Citations

Komatsu, Shinichi. (2013). Semiconductor device having bipolar transistor (U.S. Patent No. 8487408). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8487408

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