The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Nov. 25, 2009
Kyung Ho Lee, Suwon-si, KR;
Dong-yoon Jang, Hwasung-si, KR;
Jung Chak Ahn, Yongin-si, KR;
Moo Sup Lim, Seoul, KR;
Yong Jei Lee, Seongnam-si, KR;
Jong Eun Park, Seongnam-si, KR;
Kyung Ho Lee, Suwon-si, KR;
Dong-Yoon Jang, Hwasung-si, KR;
Jung Chak Ahn, Yongin-si, KR;
Moo Sup Lim, Seoul, KR;
Yong Jei Lee, Seongnam-si, KR;
Jong Eun Park, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.