The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

Oct. 28, 2010
Applicants:

Kai Cheng, Leuven, BE;

Stefan Degroote, Scherpenheuvel-Zichem, BE;

Inventors:

Kai Cheng, Leuven, BE;

Stefan Degroote, Scherpenheuvel-Zichem, BE;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/15 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated semiconductor substrate structure is disclosed. In one aspect, the structure includes a substrate, a GaN-heterostructure and a semiconductor substrate layer. The GaN heterostructure is present in a first device area for definition of GaN-based devices, and is covered at least partially with a protection layer. The semiconductor substrate layer is present in a second device area for definition of CMOS devices. At least one of the GaN heterostructure and the semiconductor substrate layer is provided in at least one trench in the substrate, so that the GaN heterostructure and the semiconductor substrate layer are laterally juxtaposed.


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