The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Jan. 20, 2011
Koji Oda, Tokyo, JP;
Tomoyuki Irizumi, Tokyo, JP;
Naoki Nakagawa, Tokyo, JP;
Takeshi Ono, Tokyo, JP;
Koji Oda, Tokyo, JP;
Tomoyuki Irizumi, Tokyo, JP;
Naoki Nakagawa, Tokyo, JP;
Takeshi Ono, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.