The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

Apr. 02, 2010
Applicants:

Noriaki Ikeda, Tokyo, JP;

Kodai Murata, Tokyo, JP;

Manabu Ito, Tokyo, JP;

Chihiro Miyazaki, Tokyo, JP;

Inventors:

Noriaki Ikeda, Tokyo, JP;

Kodai Murata, Tokyo, JP;

Manabu Ito, Tokyo, JP;

Chihiro Miyazaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/04 (2006.01); H01L 31/036 (2006.01); H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0376 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.


Find Patent Forward Citations

Loading…