The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2013

Filed:

Dec. 25, 2009
Applicants:

Agus Subagyo, Hokkaido, JP;

Motonori Nakamura, Hokkaido, JP;

Tomoaki Yamabayashi, Hokkaido, JP;

Osamu Takahashi, Hokkaido, JP;

Hiroaki Kikuchi, Hokkaido, JP;

Katsunori Kondo, Hokkaido, JP;

Inventors:

Agus Subagyo, Hokkaido, JP;

Motonori Nakamura, Hokkaido, JP;

Tomoaki Yamabayashi, Hokkaido, JP;

Osamu Takahashi, Hokkaido, JP;

Hiroaki Kikuchi, Hokkaido, JP;

Katsunori Kondo, Hokkaido, JP;

Assignees:

Mitsumi Electric Co., Ltd., Tokyo, JP;

Arkray, inc., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.


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