The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Aug. 26, 2009
Seung-mook Lee, Yongin, KR;
Jin-woo Park, Yongin, KR;
Sang-woo Pyo, Yongin, KR;
Myung-jong Jung, Yongin, KR;
Do-young Kim, Yongin, KR;
Dae-hoon Kim, Yongin, KR;
Hyo-yeon Kim, Yongin, KR;
Seung-Mook Lee, Yongin, KR;
Jin-Woo Park, Yongin, KR;
Sang-Woo Pyo, Yongin, KR;
Myung-Jong Jung, Yongin, KR;
Do-Young Kim, Yongin, KR;
Dae-Hoon Kim, Yongin, KR;
Hyo-Yeon Kim, Yongin, KR;
Samsung Display Co., Ltd., Giheung-Gu, Yongin, Gyeonggi-Do, KR;
Abstract
Provided are a donor substrate for laser induced thermal imaging (LITI) and a method of fabricating an organic light emitting diode (OLED) using the same, which can prevent a transferred emission layer from being damaged by heat and thus prevent wrinkles from forming on the surface thereof. The donor substrate includes a base layer, a light-to-heat conversion layer disposed on the base layer, a first transfer layer disposed on the light-to-heat conversion layer and including an organic layer, an inorganic layer, or a double layer thereof, and a second transfer layer disposed on the first transfer layer and including an emission layer. The first transfer layer has an absolute value of lowest unoccupied molecular orbital energy level of 2.6 to 3.0 eV and a band gap energy of 2.8 to 3.4 eV.