The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
May. 20, 2010
Applicants:
Russell David Anderson, Bristol, GB;
Kenneth Warren Hang, Hillsborough, NC (US);
Shih-ming Kao, Taoyuan County, TW;
Giovanna Laudisio, Bristol, GB;
Cheng-nan Lin, Taoyuan, TW;
Chun-kwei Wu, Taoyuan, TW;
Inventors:
Russell David Anderson, Bristol, GB;
Kenneth Warren Hang, Hillsborough, NC (US);
Shih-Ming Kao, Taoyuan County, TW;
Giovanna Laudisio, Bristol, GB;
Cheng-Nan Lin, Taoyuan, TW;
Chun-Kwei Wu, Taoyuan, TW;
Assignee:
E I Du Pont De Nemours and Company, Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0392 (2006.01); H01L 21/283 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: