The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8486812 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 16, 2013

Filed:

Oct. 12, 2004
Applicants:

Ji-yong Park, Suwon-si, KR;

Hye-hyang Park, Suwon-si, KR;

Inventors:

Ji-Yong Park, Suwon-si, KR;

Hye-Hyang Park, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a fabrication method for polycrystalline silicon thin that is capable of providing uniform crystallization of polycrystalline silicon thin film by laser using a mask having a mixed structure of laser transmission regions and laser non-transmission regions, wherein the laser transmission regions exist asymmetrically on the basis of a laser scanning directional axis, and the laser transmission regions exist symmetrically on the basis of a certain central axis, and the laser transmission regions are shifted to a certain distance on the basis of another axis parallel to the certain central axis, so that the laser transmission regions and non laser transmission regions are alternately positioned.


Find Patent Forward Citations

Park, Ji-Yong. (2013). Fabrication method for polycrystalline silicon thin film and display device fabricated using the same (U.S. Patent No. 8486812). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8486812

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