The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
May. 26, 2009
Applicants:
Jin Liu, Amersfoort, NL;
Aarnoud Laurens Roest, Geldrop, NL;
Freddy Roozeboom, Waalre, NL;
Vahid Shabro, Austin, TX (US);
Inventors:
Jin Liu, Amersfoort, NL;
Aarnoud Laurens Roest, Geldrop, NL;
Freddy Roozeboom, Waalre, NL;
Vahid Shabro, Austin, TX (US);
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/8242 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance while being efficient in utilization of semiconductor real estate.