The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Mar. 30, 2011
Nam-gun Kim, Seoul, KR;
Sung-il Cho, Seoul, KR;
Yoon-jae Kim, Yongin-si, KR;
Doo-young Lee, Seoul, KR;
Nam-Gun Kim, Seoul, KR;
Sung-Il Cho, Seoul, KR;
Yoon-Jae Kim, Yongin-si, KR;
Doo-Young Lee, Seoul, KR;
SAMSUNG Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of fabricating a semiconductor device includes forming a first contact opening having a relatively larger depth than a second contact opening to expose first and second contacts through an insulation layer, where the first and second contacts are located at different depths with respect to an upper surface of the insulation layer. Therefore, it is possible to prevent excessive over-etch of the second contact opening and minimize etching damage to the contact region exposed by the second contact opening.