The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Feb. 03, 2011
Byoung-june Kim, Seoul, KR;
Jae-ho Choi, Seoul, KR;
Chang-oh Jeong, Suwon-si, KR;
Sung-hoon Yang, Seoul, KR;
Je-hun Lee, Seoul, KR;
Do-hyun Kim, Seoul, KR;
Hwa-yeul OH, Suwon-si, KR;
Yong-mo Choi, Suwon-si, KR;
Byoung-June Kim, Seoul, KR;
Jae-Ho Choi, Seoul, KR;
Chang-Oh Jeong, Suwon-si, KR;
Sung-Hoon Yang, Seoul, KR;
Je-Hun Lee, Seoul, KR;
Do-Hyun Kim, Seoul, KR;
Hwa-Yeul Oh, Suwon-si, KR;
Yong-Mo Choi, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Abstract
A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.