Solid-state imaging device and fabrication method thereof

Abstract

A fabrication method for solid-state imaging devices includes having circuitry formed on a substrate, forming a lower electrode layer on the circuitry, patterning the lower electrode layer to separate pixel-wise into a set of segments, and forming a compound-semiconductor film of chalcopyrite structure over a whole area of element regions. A resist layer is applied on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments, and an ion doping is applied over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film. The method includes removing the resist layer for exposure of surfaces of as set of compound-semiconductor thin films separated pixel-wise by the element separating regions. A transparent electrode layer is formed in a planarizing manner over a whole area of element regions.